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This thing promises to store data... almost forever.
QuInAs Technology was created on the basis of the Faculty of Physics at the University of Lancaster to further develop and commercialize UltraRAM. This week, real UltraRAM memory chips were presented for the first time in the university's lab.
This potentially revolutionary technology is designed to combine the immutability of flash memory with faster speeds than DRAM. The memory retains data even after a power outage, and according to the company, it has an endurance that exceeds NAND by 4,000 times, and can store data for more than 1,000 years. In addition, it has a latency of 1/10 of DRAM and is more energy efficient, which has attracted the attention of industry giants such as Meta.
The main technology behind UltraRAM is a triple barrier resonant tunneling (TBRT) structure, which plays a role similar to the oxide layer of NAND flash memory, but, according to the Lancaster University team, can store data for more than 1,000 years.
Two key events reinforced QuInAs confidence in the commercial success of UltraRAM. First, at the Flash Memory Summit in August, UltraRAM received an award for "The most innovative startup in the field of flash Memory". Secondly, QuInAs has received significant funding from Innovate UK, which confirms the commercial viability of the product.
QuInAs Technology was created on the basis of the Faculty of Physics at the University of Lancaster to further develop and commercialize UltraRAM. This week, real UltraRAM memory chips were presented for the first time in the university's lab.
This potentially revolutionary technology is designed to combine the immutability of flash memory with faster speeds than DRAM. The memory retains data even after a power outage, and according to the company, it has an endurance that exceeds NAND by 4,000 times, and can store data for more than 1,000 years. In addition, it has a latency of 1/10 of DRAM and is more energy efficient, which has attracted the attention of industry giants such as Meta.
The main technology behind UltraRAM is a triple barrier resonant tunneling (TBRT) structure, which plays a role similar to the oxide layer of NAND flash memory, but, according to the Lancaster University team, can store data for more than 1,000 years.
Two key events reinforced QuInAs confidence in the commercial success of UltraRAM. First, at the Flash Memory Summit in August, UltraRAM received an award for "The most innovative startup in the field of flash Memory". Secondly, QuInAs has received significant funding from Innovate UK, which confirms the commercial viability of the product.
